 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| VISHAY BYT56. Vishay Semiconductors Fast Avalanche Sinterglass Diode \ Features * * * * Glass passivated junction Hermetically sealed package Low reverse current Soft recovery characteristics Applications Very fast rectification and switching diode Mechanical Data Case: Sintered glass case, SOD 64 949588 Terminals: Plated axial leads, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight: 860 mg, (max. 1000 mg) Parts Table Part BYT56A BYT56B BYT56D BYT56G BYT56J BYT56K BYT56M Type differentiation VR = 50 V; IFAV = 3 A VR = 100 V; IFAV = 3 A VR = 200 V; IFAV = 3 A VR = 400 V; IFAV = 3 A VR = 600 V; IFAV = 3 A VR = 800 V; IFAV = 3 A VR = 1000 V; IFAV = 3 A SOD64 SOD64 SOD64 SOD64 SOD64 SOD64 SOD64 Package Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Parameter Reverse voltage = Repetitive peak reverse voltage Test condition see electrical characteristics see electrical characteristics see electrical characteristics see electrical characteristics see electrical characteristics see electrical characteristics see electrical characteristics Sub type BYT56A BYT56B BYT56D BYT56G BYT56J BYT56K BYT56M Symbol VR = VRRM VR = VRRM VR = VRRM VR = VRRM VR = VRRM VR = VRRM VR = VRRM Value 50 100 200 400 600 800 1000 Unit V V V V V V V Document Number 86032 Rev. 5, 07-Jan-03 www.vishay.com 1 BYT56. Vishay Semiconductors Parameter Peak forward surge current Average forward current Junction and storage temperature range Non repetitive reverse avalanche energy I(BR)R = 0.4 A on PC board l = 10 mm Test condition tp = 10 ms, half sinewave Sub type Symbol IFSM IFAV IFAV VISHAY Value 80 1.5 3 Unit A A A C mJ Tj = Tstg - 55 to + 175 ER 10 Maximum Thermal Resistance Tamb = 25 C, unless otherwise specified Parameter Junction ambient Test condition l = 10 mm, TL = constant on PC board with spacing 25 mm Sub type Symbol RthJA RthJA Value 25 70 Unit K/W K/W Electrical Characteristics Tamb = 25 C, unless otherwise specified Parameter Forward voltage Reverse current Reverse recovery time IF = 3 A VR = VRRM VR = VRRM, Tj = 150 C IF = 0.5 A, IR = 1 A, iR = 0.25 A Test condition Sub type Symbol VF IR IR trr Min Typ. Max 1.4 5 150 100 Unit V A A ns Typical Characteristics (Tamb = 25 C unless otherwise specified) R thJA - Therm. Resist. Junction / Ambient ( K/W ) 40 100.000 30 I F - Forward Current ( A) 10.000 Tj=175C Tj=25C 1.000 0.100 0.010 0.001 20 l l 10 TL=constant 0 0 5 10 15 20 25 30 l - Lead Length ( mm ) 0.0 16365 0.5 1.0 1.5 2.0 2.5 3.0 94 9462 VF - Forward Voltage ( V ) Figure 1. Max. Thermal Resistance vs. Lead Length Figure 2. Forward Current vs. Forward Voltage www.vishay.com 2 Document Number 86032 Rev. 5, 07-Jan-03 VISHAY BYT56. Vishay Semiconductors I FAV - Average Forward Current ( A ) 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 20 RthJA=70K/W PCB: d=25mm VR=VRRM half sinewave RthJA=25K/W l=10mm PR - Reverse Power Dissipation ( mW ) 3.5 450 400 350 300 250 200 150 100 50 0 60 80 100 120 140 160 180 Tamb - Ambient Temperature ( C ) 40 25 16368 VR = VRRM PR-Limit @100%VR PR-Limit @80%VR 16366 50 75 100 125 150 Tj - Junction Temperature ( C ) 175 Figure 3. Max. Average Forward Current vs. Ambient Temperature Figure 5. Max. Reverse Power Dissipation vs. Junction Temperature 1000 VR = VRRM CD - Diode Capacitance ( pF ) IR - Reverse Current ( mA ) 90 80 70 60 50 40 30 20 10 f=1MHz 100 10 1 25 16367 0 50 75 100 125 150 175 16369 0.1 1.0 10.0 100.0 Tj - Junction Temperature ( C ) VR - Reverse Voltage ( V ) Figure 4. Reverse Current vs. Junction Temperature Figure 6. Diode Capacitance vs. Reverse Voltage Package Dimensions in mm Sintered Glass Case SOD 64 Weight max. 1.0g Cathode Identification 4.3 max. technical drawings according to DIN specifications 1.35 max. 26 min. 4.2 max. 26 min. 94 9587 Document Number 86032 Rev. 5, 07-Jan-03 www.vishay.com 3 BYT56. Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. VISHAY 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 www.vishay.com 4 Document Number 86032 Rev. 5, 07-Jan-03 |
Price & Availability of BYT56
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |